1. Characteristic emission from quantum dot-like intersection nodes of dislocations in GaN. Issue 1 (March 2021) Authors: Shapenkov, S V; Vyvenko, O F; Schmidt, G; Bertram, F; Metzner, S; Veit, P; Christen, J Journal: Journal of physics Issue: Volume 1851:Issue 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Defect characterization of heavy-ion irradiated AlInN/GaN on Si high-electron-mobility transistors. (20th December 2021) Authors: Challa, S R; Witte, H; Schmidt, G; Bläsing, J; Vega, N; Kristukat, C; Müller, N A; Debray, M E; Christen, J; Dadgar, A; Strittmatter, A Journal: Journal of physics Issue: Volume 55:Number 11(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Desorption induced formation of low-density GaN quantum dots: nanoscale correlation of structural and optical properties. (5th January 2022) Authors: Schürmann, H; Schmidt, G; Bertram, F; Berger, C; Metzner, S; Veit, P; Dadgar, A; Strittmatter, A; Christen, J Journal: Journal of physics Issue: Volume 55:Number 14(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Selective area growth of AlN/GaN nanocolumns on (0001) and (11–22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates. (16th August 2017) Authors: Bengoechea-Encabo, A; Albert, S; Müller, M; Xie, M–Y; Veit, P; Bertram, F; Sanchez-Garcia, M A; Zúñiga-Pérez, J; de Mierry, P; Christen, J; Calleja, E Journal: Nanotechnology Issue: Volume 28:Number 36(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗