Defect characterization of heavy-ion irradiated AlInN/GaN on Si high-electron-mobility transistors. (20th December 2021)

• Record Type: Journal Article
• Authors: Challa, S R; Witte, H; Schmidt, G; Bläsing, J; Vega, N; Kristukat, C; Müller, N A; Debray, M E; Christen, J; Dadgar, A; Strittmatter, A
• Is Part Of: Journal of physics. Volume 55:Number 11(2022)
• Publication Date: 2021-12-20
• Subjects: gallium nitride -- high electron mobility transistor -- deep defects -- ion irradiation -- optical and electrical defect spectroscopy; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ac40b8
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The characteristic energies of traps in InAlN/AlN/GaN high-electron mobility transistor structures on Si(111) substrates formed after irradiation with 75 MeV S-ions are studied by means of c -lattice parameter analysis, vertical IV-characteristics, micro-photoluminescence ( µ -PL), photocurrent (PC) and thermally stimulated current (TSC) spectroscopy. From the lattice parameter analysis, point defect formation is concluded to be the dominant source of defects upon irradiation. A strong compensation effect manifests itself through enhanced resistivity of the devices as found in vertical IV-measurements. Defect formation is detected optically by an additional PL-band within the green spectral region, while defect states with threshold energies at 2.9 eV and 2.65 eV were observed by PC spectroscopy. The TSC spectra exhibit two defect-related emissions between 300 K and 400 K with thermal activation energies of 0.78–0.82 eV and 0.91–0.98 eV, respectively. The data further supports the formation of Ga vacancies ( V Ga ) and related complexes acting mainly as acceptors compensating the originally undoped n -type GaN buffer layers after irradiation.