Author/Creator: Chou, Chuan-Pu - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Chou, Chuan-Pu

1. Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance. (3rd June 2021)

Authors:: Sun, Chong-Jhe; Yan, Siao-Cheng; Lin, Yi-Wen; Tsai, Meng-Ju; Tsai, Yu-Chen; Chou, Chuan-Pu; Hou, Fu-Ju; Luo, Guang-Li; Wu, Yung-Chun
Journal:: ECS journal of solid state science and technology
Issue:: Volume 10:Number 6(2021)
Page Start:
Record Type:: Journal Article
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2. Impact of GeSn Crystallinity on Reliability of Ferroelectric HfZrOx for Devices with Metal–Ferroelectric–Semiconductor Structure. Issue 7 (20th May 2020)

Authors:: Chou, Chuan-Pu; Lin, Yan-Xiao; Huang, Yu-Kai; Chan, Chih-Yu; Wu, Yung-Hsien
Journal:: Physica status solidi
Issue:: Volume 14:Issue 7(2020)
Page Start:: n/a
Record Type:: Journal Article
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3. Investigation of Capping Layer on Characteristics of Poly-GeSn Junctionless p-Channel Thin Film Transistors. (17th October 2019)

Authors:: Chou, Chuan-Pu; Lin, Yan-Xiao; Hsieh, Kuan-Yin; Wu, Yung-Hsien
Journal:: ECS journal of solid state science and technology
Issue:: Volume 8:Number 11(2019)
Page Start:: P647
Record Type:: Journal Article
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4. Investigation of Capping Layer on Characteristics of Poly-GeSn Junctionless p-Channel Thin Film Transistors. (1st January 2019)

Authors:: Chou, Chuan-Pu; Lin, Yan-Xiao; Hsieh, Kuan-Yin; Wu, Yung-Hsien
Journal:: ECS journal of solid state science and technology
Issue:: Volume 8:Number 11(2019)
Page Start:: P647
Record Type:: Journal Article
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5. Poly-GeSn junctionless P-TFTs featuring a record high ION/IOFF ratio and hole mobility by defect engineering. Issue 17 (15th April 2019)

Authors:: Chou, Chuan-Pu; Lin, Yan-Xiao; Hsieh, Kuan-Ying; Wu, Yung-Hsien
Journal:: Journal of materials chemistry
Issue:: Volume 7:Issue 17(2019)
Page Start:: 5201
Record Type:: Journal Article
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