1. A study of the characteristics of indium tin oxide after chlorine electro-chemical treatment. (October 2016) Authors: Kim, Moonsoo; Kim, Jongmin; Cho, Jaehee; Kim, Hyunwoo; Lee, Nayoung; Choi, Byoungdeog Journal: Materials research bulletin Issue: Volume 82(2016) Page Start: 115 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Abnormal degradation of high-voltage p-type MOSFET with n+ polycrystalline silicon gate during AC stress. (17th October 2016) Authors: Lee, Dongjun; Joo, Ikhyung; Lee, Changsub; Song, Duheon; Choi, Byoungdeog Journal: Japanese journal of applied physics Issue: Volume 55:Number 11(2016:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Application of Fin Structure Factor to Reduce the Body Effect in 20 nm DRAM Cells. (7th July 2017) Authors: Jung, Ilwoo; Kim, Hyungsub; Choi, Byoungdeog Journal: ECS transactions Issue: Volume 77:Number 11(2017) Page Start: 1893 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Bias stress instability of LTPS TFTs on flexible substrate with activation annealing temperature. (October 2020) Authors: Kim, Soonkon; Kim, Hyojung; Kim, Kihwan; Choi, Pyungho; Choi, Byoungdeog Journal: Microelectronics and reliability Issue: Volume 113(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Degradation Model of a-IGZO TFT due to High Drain Bias Stress. (1st January 2019) Authors: Kim, Kihwan; Jeon, Sangho; Lee, Hyunjun; Seo, Miseon; Cho, Hyunguk; Choi, Byoungdeog Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 7(2019) Page Start: Q3242 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Degradation Model of a-IGZO TFT due to High Drain Bias Stress. (8th July 2019) Authors: Kim, Kihwan; Jeon, Sangho; Lee, Hyunjun; Seo, Miseon; Cho, Hyunguk; Choi, Byoungdeog Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 7(2019) Page Start: Q3242 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Degradation modeling with spatial mapping method in low temperature poly silicon thin film transistor aged off-state bias. (January 2021) Authors: Kim, Kihwan; Song, Minjoon; Kim, Soonkon; Kim, Hyojung; Jeon, Sangho; Cho, Youngmi; Kim, Yongjo; Choi, Byoungdeog Journal: Microelectronics and reliability Issue: Volume 116(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Effect of field oxide structure on endurance characteristics of NAND flash memory. Issue 10 (1st May 2014) Authors: Kim, Kiyong; Yoon, Joongho; Kim, Yungsam; Kim, Hongsig; Lee, Haebum; Cho, Insoo; Kim, Sangsoo; Choi, Byoungdeog Journal: Electronics letters Issue: Volume 50:Issue 10(2014) Page Start: 739 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. High-precision and ultrafast UV laser system for next-generation flexible PCB drilling. (January 2016) Authors: Kim, Kwang-Ryul; Cho, Jae-Hee; Lee, Na-Young; Kim, Hyun-Jin; Cho, Sung-Hak; Park, Hong-Jin; Choi, Byoungdeog Journal: Journal of manufacturing systems Issue: Volume 38(2016) Page Start: 107 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. High-pressure H2O post-annealing for improving reliability of LTPS and a-IGZO thin-film transistors within a coplanar structure. (April 2023) Authors: Yoo, Jongmin; Hong, Jin-Hwan; Kim, Hyojung; Kim, Dongbhin; Lee, Chan-kyu; Kim, Minsoo; Byun, Changwoo; Choi, Byoungdeog Journal: Materials science in semiconductor processing Issue: Volume 157(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗