1. Bias Polarity‐Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer. (6th July 2015) Authors: Huang, Jian‐Shiou; Lin, Yung‐Chang; Tsai, Hung‐Wei; Yen, Wen‐Chun; Chen, Chia‐Wei; Lee, Chi‐Yuan; Chin, Tsung‐Shune; Chueh, Yu‐Lun Journal: Advanced Electronic Materials Issue: Volume 1:Number 8(2015:Aug.) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗