Bias Polarity‐Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer. (6th July 2015)

• Record Type: Journal Article
• Authors: Huang, Jian‐Shiou; Lin, Yung‐Chang; Tsai, Hung‐Wei; Yen, Wen‐Chun; Chen, Chia‐Wei; Lee, Chi‐Yuan; Chin, Tsung‐Shune; Chueh, Yu‐Lun
• Is Part Of: Advanced Electronic Materials. Volume 1:Number 8(2015:Aug.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-07-06
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201500061
• Languages: English
• ISSNs: 2199-160X

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="aelm201500061-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Bias polarity‐induced transformation of point contact resistive switching memory from a single transparent conductive metal oxide layer</bold> is demonstrated on three kinds of transparent conductive oxide (TCO) layers, including indium tin oxide, fluorine‐doped tin oxide, and aluminum‐doped zinc oxide, as conducting electrode and memristive material by the controllably electrical field simultaneously. <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgj2ffrgsnm" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </abstract>