1. (Invited) Gate-All-Around Transistors Based on Vertically Stacked Si Nanowires. (26th April 2017) Authors: Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy Yakovitch; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Schram, Tom; Kunnen, Eddy; Ragnarsson, Lars-Åke; Dekkers, Harold F. W.; Hopf, Toby; Devriendt, Katia; Tsvetanova, Diana; Chew, Soon Aik; Kikuchi, Yoshiaki; Van Besien, Els; Rosseel, Erik; Manna... Journal: ECS transactions Issue: Volume 77:Number 5(2017) Page Start: 19 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗