Author/Creator: Chevalier, Pascal - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Chevalier, Pascal

1. A Comparative Analysis of a Si/SiGe Heterojunction-Bipolar Transistors: APT, STEM-EDX and ToF-SIMS. (23rd September 2015)

Authors:: Estivill, Robert; Chevalier, Pascal; Lorut, Frederic; Juhel, Marc; Clement, Laurent; Servanton, Germain; Avenier, Gregory; Grenier, Adeline; Blavette, Didier
Journal:: Microscopy and microanalysis
Issue:: Volume 21(2015:Jun.)Supplement 3
Page Start:: 689
Record Type:: Journal Article
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2. A Comparative Analysis of a Si/SiGe Heterojunction-Bipolar Transistors: APT, STEM-EDX and ToF-SIMS. (August 2015)

Authors:: Estivill, Robert; Chevalier, Pascal; Lorut, Frederic; Juhel, Marc; Clement, Laurent; Servanton, Germain; Avenier, Gregory; Grenier, Adeline; Blavette, Didier
Journal:: Microscopy and microanalysis
Issue:: Volume 21(2015:Jun.)Supplement 3
Page Start:: 689
Record Type:: Journal Article
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3. Heterojunction bipolar transistor featuring a stressed implanted collector: Defects formation and impact on functionality. (December 2022)

Authors:: Brezza, Edoardo; Dumas, Paul; Gauthier, Alexis; Hilario, Fanny; Chevalier, Pascal; Gaquière, Christophe; Defrance, Nicolas
Journal:: Microelectronics and reliability
Issue:: Volume 139(2022)
Page Start:
Record Type:: Journal Article
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4. Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz. (March 2017)

Authors:: Deng, Marina; Quémerais, Thomas; Bouvot, Simon; Gloria, Daniel; Chevalier, Pascal; Lépilliet, Sylvie; Danneville, François; Dambrine, Gilles
Journal:: Solid-state electronics
Issue:: Volume 129(2017)
Page Start:: 150
Record Type:: Journal Article
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5. TCAD Calibration of High-Speed Si/SiGe HBTs in 55-nm BiCMOS. (18th August 2016)

Authors:: VU, Van-Tuan; Celi, Didier; Zimmer, Thomas; Fregonese, Sebastien; Chevalier, Pascal
Journal:: ECS transactions
Issue:: Volume 75:Number 8(2016)
Page Start:: 113
Record Type:: Journal Article
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