A Comparative Analysis of a Si/SiGe Heterojunction-Bipolar Transistors: APT, STEM-EDX and ToF-SIMS. (23rd September 2015)

Record Type:: Journal Article
Title:: A Comparative Analysis of a Si/SiGe Heterojunction-Bipolar Transistors: APT, STEM-EDX and ToF-SIMS. (23rd September 2015)
Main Title:: A Comparative Analysis of a Si/SiGe Heterojunction-Bipolar Transistors: APT, STEM-EDX and ToF-SIMS
Authors:: Estivill, Robert
Chevalier, Pascal
Lorut, Frederic
Juhel, Marc
Clement, Laurent
Servanton, Germain
Avenier, Gregory
Grenier, Adeline
Blavette, Didier
Abstract:
Is Part Of:: Microscopy and microanalysis. Volume 21(2015:Jun.)Supplement 3
Journal:: Microscopy and microanalysis
Issue:: Volume 21(2015:Jun.)Supplement 3
Issue Display:: Volume 21, Issue 3 (2015)
Year:: 2015
Volume:: 21
Issue:: 3
Issue Sort Value:: 2015-0021-0003-0000
Page Start:: 689
Page End:: 690
Publication Date:: 2015-09-23
Subjects:: Microscopy -- Periodicals
Microchemistry -- Periodicals
502.82
Journal URLs:: https://academic.oup.com/mam ↗
http://journals.cambridge.org/action/displayJournal?jid=MAM ↗
http://link.springer.de/link/service/journals/10005/index.htm ↗
http://firstsearch.oclc.org ↗
DOI:: 10.1017/S1431927615004249 ↗
Languages:: English
ISSNs:: 1431-9276
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library HMNTS - ELD Digital store
Ingest File:: 550.xml