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Author/Creator Chen, Siming

52. Synergistic Effect of Sr‐O Divacancy and Exposing Facets in SrTiO3 Micro/Nano Particle: Accelerating Exciton Formation and Splitting, Highly Efficient Co2+ Photooxidation (Small 44/2022). Issue 44 (3rd November 2022)

Authors:
Jia, Qibo; Wang, Chuyu; Liu, Jian; Cai, Xiaojiao; Zhong, Li; Chen, Siming; Li, Ting; Yu, Gangqiang; Wu, Li‐zhu; Duan, Dongping
Journal:
Small
Issue:
Volume 18:Issue 44(2022)
Page Start:
n/a
Record Type:
Journal Article
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53. Synergistic Effect of Sr‐O Divacancy and Exposing Facets in SrTiO3 Micro/Nano Particle: Accelerating Exciton Formation and Splitting, Highly Efficient Co2+ Photooxidation. Issue 44 (5th September 2022)

Authors:
Jia, Qibo; Wang, Chuyu; Liu, Jian; Cai, Xiaojiao; Zhong, Li; Chen, Siming; Li, Ting; Yu, Gangqiang; Wu, Li‐zhu; Duan, Dongping
Journal:
Small
Issue:
Volume 18:Issue 44(2022)
Page Start:
n/a
Record Type:
Journal Article
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55. The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix. (8th December 2022)

Authors:
Jia, Hui; Yang, Junjie; Tang, Mingchu; Li, Wei; Jurczak, Pamela; Yu, Xuezhe; Zhou, Taojie; Park, Jae-Seong; Li, Keshuang; Deng, Huiwen; Yu, Xueying; Li, Ang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun
Journal:
Journal of physics
Issue:
Volume 55:Number 49(2022)
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Record Type:
Journal Article
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56. The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers. (26th May 2022)

Authors:
Deng, Huiwen; Jarvis, Lydia; Li, Zhibo; Liu, Zizhuo; Tang, Mingchu; Li, Keshuang; Yang, Junjie; Maglio, Benjamin; Shutts, Samuel; Yu, Jiawang; Wang, Lingfang; Chen, Siming; Jin, Chaoyuan; Seeds, Alwyn; Liu, Huiyun; Smowton, Peter M
Journal:
Journal of physics
Issue:
Volume 55:Number 21(2022)
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Record Type:
Journal Article
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58. Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon. (22nd August 2018)

Authors:
Guo, Daqian; Jiang, Qi; Tang, Mingchu; Chen, Siming; Mazur, Yuriy I; Maidaniuk, Y; Benamara, Mourad; Semtsiv, Mykhaylo P; Masselink, William T; Salamo, Gregory J; Liu, Huiyun; Wu, Jiang
Journal:
Semiconductor science and technology
Issue:
Volume 33:Number 9(2018:Sep.)
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Record Type:
Journal Article
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