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Author/Creator Chen, Po‐Hsun

1. A Dual‐Gate InGaZnO4‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection. Issue 8 (17th May 2019)

Authors:
Chen, Po‐Hsun; Tsao, Yu‐Ching; Chien, Yu‐Chieh; Chiang, Hsiao‐Cheng; Chen, Hua‐Mao; Lu, Ying‐Hsin; Shih, Chih‐Cheng; Tai, Mao‐Chou; Chen, Guan‐Fu; Tsai, Yu‐Lin; Huang, Hui‐Chun; Tsai, Tsung‐Ming; Chang, Ting‐Chang
Journal:
Advanced materials technologies
Issue:
Volume 4:Issue 8(2019)
Page Start:
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Record Type:
Journal Article
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2. Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices. Issue 42 (29th September 2020)

Authors:
Lin, Chih‐Yang; Chen, Jia; Chen, Po‐Hsun; Chang, Ting‐Chang; Wu, Yuting; Eshraghian, Jason K.; Moon, John; Yoo, Sangmin; Wang, Yu‐Hsun; Chen, Wen‐Chung; Wang, Zhi‐Yang; Huang, Hui‐Chun; Li, Yi; Miao, Xiangshui; Lu, Wei D.; Sze, Simon M.
Journal:
Small
Issue:
Volume 16:Issue 42(2020)
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Journal Article
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4. Enhancement of Surface Chemical and Physical Properties of Germanium–Sulfur Thin Film Using a Water‐Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique. Issue 21 (23rd August 2018)

Authors:
Yang, Chih‐Cheng; Chen, Po‐Hsun; Shih, Chih‐Cheng; Wang, Ming‐Hui; Tsai, Tsung‐Ming; Zheng, Hao‐Xuan; Chen, Wen‐Chung; Chen, Min‐Chen; Huang, Hui‐Chun; Ma, Xiao‐Hua; Hao, Yue; Huang, Jen‐Wei; Sze, Simon M.; Chang, Ting‐Chang
Journal:
Advanced materials interfaces
Issue:
Volume 5:Issue 21(2018)
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Record Type:
Journal Article
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5. Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device. (20th April 2020)

Authors:
Huang, Wei‐Chen; Zheng, Hao‐Xuan; Chen, Po‐Hsun; Chang, Ting‐Chang; Tan, Yung‐Fang; Lin, Shih‐Kai; Zhang, Yong‐Ci; Jin, Fu‐Yuan; Wu, Chung‐Wei; Yeh, Yu‐Hsuan; Chou, Sheng‐Yao; Huang, Hui‐Chun; Chen, Yan‐Wen; Sze, Simon M.
Journal:
Advanced Electronic Materials
Issue:
Volume 6:Number 6(2020)
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Journal Article
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7. Resistive Random Access Memory: Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure (Adv. Electron. Mater. 9/2017). (11th September 2017)

Authors:
Tseng, Yi‐Ting; Chen, Po‐Hsun; Chang, Ting‐Chang; Chang, Kuan‐Chang; Tsai, Tsung‐Ming; Shih, Chih‐Cheng; Huang, Hui‐Chun; Yang, Cheng‐Chi; Lin, Chih‐Yang; Wu, Cheng‐Hsien; Zheng, Hao‐Xuan; Zhang, Shengdong; Sze, Simon M.
Journal:
Advanced Electronic Materials
Issue:
Volume 3:Number 9(2017)
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Journal Article
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8. Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure. (31st July 2017)

Authors:
Tseng, Yi‐Ting; Chen, Po‐Hsun; Chang, Ting‐Chang; Chang, Kuan‐Chang; Tsai, Tsung‐Ming; Shih, Chih‐Cheng; Huang, Hui‐Chun; Yang, Cheng‐Chi; Lin, Chih‐Yang; Wu, Cheng‐Hsien; Zheng, Hao‐Xuan; Zhang, Shengdong; Sze, Simon M.
Journal:
Advanced Electronic Materials
Issue:
Volume 3:Number 9(2017)
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Record Type:
Journal Article
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