Resistive Random Access Memory: Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure (Adv. Electron. Mater. 9/2017). (11th September 2017)

• Record Type: Journal Article
• Authors: Tseng, Yi‐Ting; Chen, Po‐Hsun; Chang, Ting‐Chang; Chang, Kuan‐Chang; Tsai, Tsung‐Ming; Shih, Chih‐Cheng; Huang, Hui‐Chun; Yang, Cheng‐Chi; Lin, Chih‐Yang; Wu, Cheng‐Hsien; Zheng, Hao‐Xuan; Zhang, Shengdong; Sze, Simon M.
• Is Part Of: Advanced Electronic Materials. Volume 3:Number 9(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-09-11
• Subjects: device scaling -- forming voltage -- resistive random access memory (RRAM) -- spacer structures; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201770041
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : A rising forming voltage issue with scaling‐down resistive random access memory (RRAM) device cells is successfully solved by introducing new high‐permittivity (high‐k) material as the side‐wall spacer structure. As reported by Ting‐Chang Chang, Kuan‐Chang Chang, and co‐workers in article number1700171, both COMSOL‐simulated electrical field and electrical measurements confirm the confined the electrical field by the surrounded high‐k spacer. The cross section views clearly show the different structures with a spacer.