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Author/Creator Chartier, E. Journal Microelectronics and reliability

1. Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. (September 2018)

Authors:
Oualli, M.; Dua, C.; Patard, O.; Altuntas, P.; Piotrowicz, S.; Gamarra, P.; Lacam, C.; Jacquet, J.-C.; Teisseire, L.; Lancereau, D.; Chartier, E.; Potier, C.; Delage, S.L.
Journal:
Microelectronics and reliability
Issue:
Volume 88/90(2018)
Page Start:
418
Record Type:
Journal Article
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