1. (Invited) Epitaxy of GaN on Si (111) for Power Electronics, RF and LEDs. (20th July 2018) Authors: Charles, Matthew; Kanyandekwe, Joël; Bos, Sandra; Baines, Yannick; Morvan, Erwan; Torres, Alphonse; Templier, François; Plissonnier, Marc Journal: ECS transactions Issue: Volume 86:Number 7(2018) Page Start: 233 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 19‐6: Invited Paper: A Novel Process for Fabricating High‐Resolution and Very Small Pixel‐pitch GaN LED Microdisplays. Issue 1 (2nd June 2017) Authors: Templier, François; Benaïssa, Lamine; Aventurier, Bernard; Nardo, Christine Di; Charles, Matthew; Daami, Anis; Henry, Franck; Dupré, Ludovic Journal: Digest of technical papers Issue: Volume 48:Issue 1(2017) Page Start: 268 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. 19‐6: Invited Paper: A Novel Process for Fabricating High‐Resolution and Very Small Pixel‐pitch GaN LED Microdisplays. Issue 1 (May 2017) Authors: Templier, François; Benaïssa, Lamine; Aventurier, Bernard; Nardo, Christine Di; Charles, Matthew; Daami, Anis; Henry, Franck; Dupré, Ludovic Journal: Digest of technical papers Issue: Volume 48:Issue 1(2017) Page Start: 268 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. A Triple-Masked, Randomized Controlled Trial Comparing Ultrasound-Guided Brachial Plexus and Distal Peripheral Nerve Block Anesthesia for Outpatient Hand Surgery. (15th April 2014) Authors: Lam, Nicholas C. K.; Charles, Matthew; Mercer, Deana; Soneru, Codruta; Dillow, Jennifer; Jaime, Francisco; Petersen, Timothy R.; Mariano, Edward R. Other Names: Wong Chih Shung Academic Editor. Journal: Anesthesiology research and practice Issue: Volume 2014(2014) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Being taught by Biesta. (2nd July 2016) Authors: Charles, Matthew Journal: Pedagogy, culture & society Issue: Volume 24:Number 3(2016) Page Start: 473 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Capping stability of Mg‐implanted GaN layers grown on silicon. Issue 4 (8th November 2016) Authors: Lardeau‐Falcy, Aurélien; Coig, Marianne; Charles, Matthew; Licitra, Christophe; Baines, Yannick; Eymery, Joël; Mazen, Frédéric Journal: Physica status solidi Issue: Volume 214:Issue 4(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Developments in understanding the nucleation of AlN on silicon by MOCVD and its effects on defects. Issue 4 (8th November 2016) Authors: Charles, Matthew; Bavard, Alexis; Bouis, Renan; Baines, Yannick; Escoffier, René Journal: Physica status solidi Issue: Volume 214:Issue 4(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors. (11th March 2019) Authors: Ferrandis, Philippe; El-Khatib, Mariam; Jaud, Marie-Anne; Morvan, Erwan; Charles, Matthew; Guillot, Gérard; Bremond, Georges Journal: Semiconductor science and technology Issue: Volume 34:Number 4(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors. Issue 5 (28th December 2021) Authors: Legallais, Maxime; Lefevre, Gauthier; Martin, Simon; Labau, Sébastien; Bassani, Franck; Pélissier, Bernard; Baron, Thierry; Vauche, Laura; Le Royer, Cyrille; Charles, Matthew; Vandendaele, William; Plissonnier, Marc; Gwoziecki, Romain; Salem, Bassem Journal: Advanced materials interfaces Issue: Volume 9:Issue 5(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy. (24th January 2017) Authors: Ferrandis, Philippe; Charles, Matthew; Baines, Yannick; Buckley, Julien; Garnier, Gennie; Gillot, Charlotte; Reimbold, Gilles Journal: Japanese journal of applied physics Issue: Volume 56:Number 4(2017)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗