1. Abnormal hump in low temperature in SiGe devices with silicon capping insertion layer. (30th July 2021) Authors: Huang, Wei-Chen; Chen, Po-Hsun; Lin, Chih-Yang; Zheng, Hao-Xuan; Chen, Hong-Chih; Ciou, Fong-Min; Tan, Yung-Fang; Chang, Kai-Chun; Lin, Yun-Hsuan; Chang, Yen-Cheng; Lin, Shih-Kai; Hung, Wei-Chun; Thio, Wesley; Chang, Ting-Chang Journal: Journal of physics Issue: Volume 54:Number 41(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Abnormal trend in hot carrier degradation with fin profile in short channel FinFET devices at 14 nm node. (1st April 2022) Authors: Kuo, Ting-Tzu; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kai-Chun; Yeh, Chien-Hung; Ciou, Fong-Min; Lin, Yu-Shan; Lin, Yun-Hsuan; Jin, Fu-Yuan; Hung, Wei-Chun; Chang, Yen-Cheng; Chen, Kuan-Hsu; Lin, Jia-Hong Journal: Semiconductor science and technology Issue: Volume 37:Number 4(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature. (5th November 2020) Authors: Sun, Li-Chuan; Lin, Chih-Yang; Chen, Po-Hsun; Tsai, Tsung-Ming; Zhou, Kuan-Ju; Tu, Yu-Fa; Huang, Wei-Chen; Tseng, Yi-Ting; Tan, Yung-Fang; Lin, Shih-Kai; Lin, Chun-Chu; Hung, Wei-Chun; Chang, Yen-Cheng; Chang, Ting-Chang Journal: Applied physics express Issue: Volume 13:Number 11(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Investigation of degradation behavior under negative bias temperature stress in Si/Si0.8Ge0.2 metal-oxide-semiconductor capacitors. (2nd September 2021) Authors: Chang, Yen-Cheng; Lin, Chien-Yu; Chang, Ting-Chang; Lin, Yun-Hsuan; Chen, Kuan-Hsu; Jin, Fu-Yuan; Lin, Yu-Shan; Ciou, Fong-Min; Chang, Kai-Chun; Hung, Wei-Chun; Kuo, Ting-Tzu; Yeh, Chien-Hung Journal: Journal of physics Issue: Volume 54:Number 47(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Investigation of degradation mechanism after negative bias temperature stress in Si/SiGe channel metal–oxide–semiconductor capacitors induced by hydrogen diffusion. (10th December 2021) Authors: Ciou, Fong-Min; Chang, Yen-Cheng; Chen, Po-Hsun; Lin, Chien-Yu; Lin, Yun-Hsuan; Chen, Kuan-Hsu; Jin, Fu-Yuan; Lin, Yu-Shan; Hung, Wei-Chun; Chang, Kai-Chun; Kuo, Ting-Tzu; Yeh, Chien-Hung; Chang, Ting-Chang Journal: Semiconductor science and technology Issue: Volume 37:Number 1(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Panchromatic co-sensitization of porphyrin-sensitized solar cells to harvest near-infrared light beyond 900 nm. Issue 4 (10th December 2014) Authors: Shiu, Jia-Wei; Chang, Yen-Cheng; Chan, Chien-Yi; Wu, Hui-Ping; Hsu, Hung-Yu; Wang, Chin-Li; Lin, Ching-Yao; Diau, Eric Wei-Guang Journal: Journal of materials chemistry Issue: Volume 3:Issue 4(2015) Page Start: 1417 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Panchromatic co-sensitization of porphyrin-sensitized solar cells to harvest near-infrared light beyond 900 nm. Issue 4 (10th December 2014) Authors: Shiu, Jia-Wei; Chang, Yen-Cheng; Chan, Chien-Yi; Wu, Hui-Ping; Hsu, Hung-Yu; Wang, Chin-Li; Lin, Ching-Yao; Diau, Eric Wei-Guang Journal: Journal of materials chemistry Issue: Volume 3:Issue 4(2015) Page Start: 1417 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Reliability enhancement in dipole-doped metal oxide semiconductor capacitor induced by low-temperature and high-pressure nitridation. (4th February 2021) Authors: Jin, Fu-Yuan; Ciou, Fong-Min; Hung, Wei-Chun; Huang, Jen-Wei; Lin, Chien-Yu; Lin, Yu-Shan; Chang, Kai-Chun; Chang, Yen-Cheng; Lin, Yun-Hsuan; Kuo, Ting-Tzu; Chen, Kuan-Hsu; Hung, Wei-Chieh; Yeh, Chien-Hung; Chang, Chin-Han; Chang, Ting-Chang Journal: Applied physics express Issue: Volume 14:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. The effect of Ni content on gas-sensing behaviors of ZnO–NiO p–n composite thin films grown through radio-frequency cosputtering of ceramic ZnO and NiO targets. Issue 13 (10th March 2020) Authors: Liang, Yuan-Chang; Chang, Yen-Cheng Journal: CrystEngComm Issue: Volume 22:Issue 13(2020) Page Start: 2315 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗