1. (Invited) Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters. (20th July 2018) Authors: von den Driesch, Nils; Stange, Daniela; Rainko, Denis; Povstugar, Ivan; Breuer, Uwe; Ikonic, Zoran; Hartmann, Jean-Michel; Schubert, Markus Andreas; Capellini, Giovanni; Sigg, Hans; Mantl, Siegfried; Grützmacher, Detlev; Buca, Dan Journal: ECS transactions Issue: Volume 86:Number 7(2018) Page Start: 189 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Si Nanowire Tunnel FETs for Energy Efficient Nanoelectronics. (31st March 2015) Authors: Zhao, Qing-Tai; Richter, Simon; Knoll, Lars; Luong, Gia Vinh; Blaeser, Sebastian; Schulte-Braucks, Christian; Schäfer, Anna; Trellenkamp, Stefan; Buca, Dan; Mantl, Siegfried Journal: ECS transactions Issue: Volume 66:Number 4(2015) Page Start: 69 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. (Invited) Tensile Strain Engineering and Defects Management in GeSn Laser Cavities. (8th September 2020) Authors: EL Kurdi, Moustafa; Elbaz, Anas; Wang, Binbin; Sakat, Emilie; Herth, Etienne; Patriarche, Gilles; Pantzas, Konstantinos; Sagnes, Isabelle; Sauvage, Sebastien; Checoury, Xavier; Chelnokov, Alexei; Reboud, Vincent; Chretien, Jeremie; Pauc, Nicolas; Calvo, Vincent; Boeuf, Frédéric; Boucaud, Philippe... Journal: ECS transactions Issue: Volume 98:Number 5(2020) Page Start: 61 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Advanced GeSn/SiGeSn Group IV Heterostructure Lasers. Issue 6 (27th March 2018) Authors: von den Driesch, Nils; Stange, Daniela; Rainko, Denis; Povstugar, Ivan; Zaumseil, Peter; Capellini, Giovanni; Schröder, Thomas; Denneulin, Thibaud; Ikonic, Zoran; Hartmann, Jean‐Michel; Sigg, Hans; Mantl, Siegfried; Grützmacher, Detlev; Buca, Dan Journal: Advanced science Issue: Volume 5:Issue 6(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Epitaxial GeSn: impact of process conditions on material quality. (16th October 2018) Authors: Loo, Roger; Shimura, Yosuke; Ike, Shinichi; Vohra, Anurag; Stoica, Toma; Stange, Daniela; Buca, Dan; Kohen, David; Margetis, Joe; Tolle, John Journal: Semiconductor science and technology Issue: Volume 33:Number 11(2018:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters. (May 2019) Authors: von den Driesch, Nils; Stange, Daniela; Rainko, Denis; Breuer, Uwe; Capellini, Giovanni; Hartmann, Jean-Michel; Sigg, Hans; Mantl, Siegfried; Grützmacher, Detlev; Buca, Dan Journal: Solid-state electronics Issue: Volume 155(2019) Page Start: 139 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Formation and optoelectronic property of strain-relaxed Ge1−x−ySixSny/Ge1−xSnx/Ge1−x−ySixSny double heterostructures on a boron-ion-implanted Ge(001) substrate. (10th July 2019) Authors: Fukuda, Masahiro; Rainko, Denis; Sakashita, Mitsuo; Kurosawa, Masashi; Buca, Dan; Nakatsuka, Osamu; Zaima, Shigeaki Journal: Japanese journal of applied physics Issue: Volume 58:Number SI(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures. Issue 1 (December 2018) Authors: Rainko, Denis; Ikonic, Zoran; Vukmirović, Nenad; Stange, Daniela; von den Driesch, Nils; Grützmacher, Detlev; Buca, Dan Journal: Scientific reports Issue: Volume 8:Issue 1(2018) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC. Issue 1 (23rd September 2022) Authors: Alfieri, Giovanni; Wirths, Stephan; Buca, Dan; Nipoti, Roberta Journal: Physica status solidi Issue: Volume 260:Issue 1(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Optoelectronic properties of high-Si-content-Ge1−x–ySixSny/Ge1−xSnx/Ge1−x–ySixSny double heterostructure. (16th November 2018) Authors: Fukuda, Masahiro; Rainko, Denis; Sakashita, Mitsuo; Kurosawa, Masashi; Buca, Dan; Nakatsuka, Osamu; Zaima, Shigeaki Journal: Semiconductor science and technology Issue: Volume 33:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗