Author/Creator: Brodar, Tomislav - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Brodar, Tomislav

1. Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime. (2nd November 2017)

Authors:: Pastuović, Željko; Siegele, Rainer; Capan, Ivana; Brodar, Tomislav; Sato, Shin-ichiro; Ohshima, Takeshi
Journal:: Journal of physics
Issue:: Volume 29:Number 47(2017)
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Record Type:: Journal Article
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2. Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS. (1st October 2022)

Authors:: Knežević, Tihomir; Brodar, Tomislav; Radulović, Vladimir; Snoj, Luka; Makino, Takahiro; Capan, Ivana
Journal:: Applied physics express
Issue:: Volume 15:Number 10(2022)
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Record Type:: Journal Article
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