Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS. (1st October 2022)

• Record Type: Journal Article
• Authors: Knežević, Tihomir; Brodar, Tomislav; Radulović, Vladimir; Snoj, Luka; Makino, Takahiro; Capan, Ivana
• Is Part Of: Applied physics express. Volume 15:Number 10(2022)
• Publication Date: 2022-10-01
• Subjects: silicon carbide -- defects -- DLTS -- radiation; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac8f83
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, E c −0.4 eV and E c −0.7 eV. They were previously assigned to carbon interstitial (Ci ) labeled as EH1/3 and silicon-vacancy ( V Si ) labeled as S1/2, for the low-energy electron and fast neutron irradiation, respectively. This work demonstrates how Laplace DLTS can be used as a useful tool for distinguishing the EH1 and S1 defects. We show that EH1 consists of a single emission line arising from the Ci ( h ), while S1 has two emission lines arising from the V Si ( h ) and V Si ( k ) lattice sites.