1. Electrografted P4VP for High Aspect Ratio Copper TSV Insulation in Via-Last Process Flow. (1st January 2016) Authors: Dequivre, Thomas; Alam, Elias Al; Maurais, Josée; Brisard, Gessie M.; Pratte, J.-F.; Charlebois, Serge A. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 6(2016) Page Start: P340 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Electrografted P4VP for High Aspect Ratio Copper TSV Insulation in Via-Last Process Flow. (22nd April 2016) Authors: Dequivre, Thomas; Alam, Elias Al; Maurais, Josée; Brisard, Gessie M.; Pratte, J.-F.; Charlebois, Serge A. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 6(2016) Page Start: P340 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Review—The Mediating Effect of Chemically Oxidized Silicon Surface on the P4VP Electrografting for Silicon Electrical Insulation. (1st January 2017) Authors: Dequivre, Thomas; Charlebois, Serge A.; Brisard, Gessie M. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 5(2017) Page Start: P304 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Review—The Mediating Effect of Chemically Oxidized Silicon Surface on the P4VP Electrografting for Silicon Electrical Insulation. (6th April 2017) Authors: Dequivre, Thomas; Charlebois, Serge A.; Brisard, Gessie M. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 5(2017) Page Start: P304 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗