Review—The Mediating Effect of Chemically Oxidized Silicon Surface on the P4VP Electrografting for Silicon Electrical Insulation. (1st January 2017)

• Record Type: Journal Article
• Authors: Dequivre, Thomas; Charlebois, Serge A.; Brisard, Gessie M.
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 5(2017)
• Page Start: P304
• Page End: P309
• Publication Date: 2017-01-01
• Subjects: 4VP -- Diazonium salt -- Electrografting -- Impedance spectroscopy -- Microelectronic -- Silicon; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0231705jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The P4VP electrografting process realized on chemically oxidized p-type silicon surface, instead of traditional oxide free surface, leads to a thicker grafted polymer film. In this paper, we studied the influence of the surface states generated during the chemical oxidation of the silicon surface, on the thickness of the P4VP film. We used electrochemical measurements and Mott-Schottky plot analysis to demonstrate that such an oxidized surface does not only allow the electrografting process to occur, but also increases the accumulation of electrons at the silicon interface. In this condition, the chemical oxidation of silicon surface enhances the electro-initiation of the P4VP electrografting process and promotes the polymer growth.