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2. Carrier Lifetime in 60Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness. Issue 23 (20th July 2021)

5. Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy. Issue 23 (29th July 2021)

8. Electrically Active Defects Induced by α‐Particle Irradiation in p‐Type Si Surface Barrier Detector. Issue 23 (8th July 2021)