1. Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures. (May 2018) Authors: Boudier, D.; Cretu, B.; Simoen, E.; Veloso, A.; Collaert, N. Journal: Solid-state electronics Issue: Volume 143(2018) Page Start: 27 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Improved physics-based analysis to discriminate the flicker noise origin at very low temperature and drain voltage polarization. (September 2020) Authors: Cretu, B.; Boudier, D.; Simoen, E.; Veloso, A.; Collaert, N.; Claeys, C. Journal: Solid-state electronics Issue: Volume 171(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs. (June 2020) Authors: Boudier, D.; Cretu, B.; Simoen, E.; Hellings, G.; Schram, T.; Mertens, H.; Linten, D. Journal: Solid-state electronics Issue: Volume 168(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part I: Theory and methodology. (February 2017) Authors: Boudier, D.; Cretu, B.; Simoen, E.; Carin, R.; Veloso, A.; Collaert, N.; Thean, A. Journal: Solid-state electronics Issue: Volume 128(2017) Page Start: 102 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part II: Measurements and results. (February 2017) Authors: Boudier, D.; Cretu, B.; Simoen, E.; Carin, R.; Veloso, A.; Collaert, N.; Thean, A. Journal: Solid-state electronics Issue: Volume 128(2017) Page Start: 109 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗