1. Advances in heteroepitaxial integration of III-V and IV-VI semiconductors with electron channeling contrast imaging. (August 2021) Authors: Hughes, Eamonn; Haidet, Brian; Bonef, Bastien; Selvidge, Jennifer; Shang, Chen; Norman, Justin; Bowers, John; Mukherjee, Kunal Journal: Microscopy and microanalysis Issue: Volume 27:Supplement 1(2021) Page Start: 908 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Atomic Scale Structural Characterization of Epitaxial (Cd, Cr)Te Magnetic Semiconductor. (7th June 2017) Authors: Bonef, Bastien; Boukari, Hervé; Grenier, Adeline; Mouton, Isabelle; Jouneau, Pierre-Henri; Kinjo, Hidekazu; Kuroda, Shinji Journal: Microscopy and microanalysis Issue: Volume 23:Number 4(2017) Page Start: 717 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes. (January 2018) Authors: Li, Panpan; Bonef, Bastien; Khoury, Michel; Lheureux, Guillaume; Li, Hongjian; Kang, Junjie; Nakamura, Shuji; DenBaars, Steven P. Journal: Superlattices and microstructures Issue: Volume 113(2018) Page Start: 684 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition. (25th October 2019) Authors: Reilly, Caroline E; Bonef, Bastien; Nakamura, Shuji; Speck, James S; DenBaars, Steven P; Keller, Stacia Journal: Semiconductor science and technology Issue: Volume 34:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Characterization of N-polar AlN in GaN/AlN/(Al, Ga)N heterostructures grown by metal-organic chemical vapor deposition. (29th September 2017) Authors: Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S; Denbaars, Steven P; Mishra, Umesh K Journal: Semiconductor science and technology Issue: Volume 32:Number 11(2017:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Dopant radial inhomogeneity in Mg-doped GaN nanowires. (25th April 2018) Authors: Siladie, Alexandra-Madalina; Amichi, Lynda; Mollard, Nicolas; Mouton, Isabelle; Bonef, Bastien; Bougerol, Catherine; Grenier, Adeline; Robin, Eric; Jouneau, Pierre-Henri; Garro, Nuria; Cros, Ana; Daudin, Bruno Journal: Nanotechnology Issue: Volume 29:Number 25(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. III-nitride blue light-emitting diodes utilizing hybrid tunnel junction with low excess voltage. (28th October 2020) Authors: Wang, Jianfeng; Young, Erin C; Ho, Wan Ying; Bonef, Bastien; Margalith, Tal; Speck, James S Journal: Semiconductor science and technology Issue: Volume 35:Number 12(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1−x)2O3/β-Ga2O3 heterostructures. (25th October 2018) Authors: Vogt, Patrick; Mauze, Akhil; Wu, Feng; Bonef, Bastien; Speck, James S. Journal: Applied physics express Issue: Volume 11:Number 11(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication. (January 2020) Authors: Khoury, Michel; Li, Hongjian; Li, Panpan; Chow, Yi Chao; Bonef, Bastien; Zhang, Haojun; Wong, Matthew S.; Pinna, Sergio; Song, Jie; Choi, Joowon; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P. Journal: Nano energy Issue: Volume 67(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition. (15th May 2020) Authors: Bonef, Bastien; Reilly, Caroline E.; Wu, Feng; Nakamura, Shuji; DenBaars, Steven P.; Keller, Stacia; Speck, James S. Journal: Applied physics express Issue: Volume 13:Number 6(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗