1. Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors. (August 2015) Authors: Schulze, Jörg; Blech, Andreas; Datta, Arnab; Fischer, Inga A.; Hähnel, Daniel; Naasz, Sandra; Rolseth, Erlend; Tropper, Eva-Maria Journal: Solid-state electronics Issue: Volume 110(2015) Page Start: 59 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗