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Author/Creator Blanck, Hervé

1. Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress. (November 2021)

Authors:
Gao, Zhan; Rampazzo, Fabiana; Meneghini, Matteo; Modolo, Nicola; De Santi, Carlo; Blanck, Hervé; Stieglauer, Hermann; Sommer, Daniel; Grünenpütt, Jan; Kordina, Olof; Chen, Jr-Tai; Jacquet, J-C; Lacam, C.; Piotrowicz, S.; Meneghesso, Gaudenzio; Zanoni, Enrico
Journal:
Microelectronics and reliability
Issue:
Volume 126(2021)
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Record Type:
Journal Article
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2. Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance. (1st March 2022)

Authors:
Chen, Ding-Yuan; Persson, Axel R; Wen, Kai-Hsin; Sommer, Daniel; Grünenpütt, Jan; Blanck, Hervé; Thorsell, Mattias; Kordina, Olof; Darakchieva, Vanya; Persson, Per O Å; Chen, Jr-Tai; Rorsman, Niklas
Journal:
Semiconductor science and technology
Issue:
Volume 37:Number 3(2022)
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Record Type:
Journal Article
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3. Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance. (25th January 2022)

Authors:
Chen, Ding-Yuan; Persson, Axel R; Wen, Kai-Hsin; Sommer, Daniel; Grünenpütt, Jan; Blanck, Hervé; Thorsell, Mattias; Kordina, Olof; Darakchieva, Vanya; Persson, Per O Å; Chen, Jr-Tai; Rorsman, Niklas
Journal:
Semiconductor science and technology
Issue:
Volume 37:Number 3(2022)
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Record Type:
Journal Article
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5. Output capacitance on GaN HEMTs in correlation to its transistor geometry and sheet resistance. Issue 3 (27th February 2014)

Authors:
Jung, Helmut; Abele, Peter; Grünenpütt, Jan; Hosch, Michael; Schauwecker, Bernd; Blanck, Hervé; Rödle, Thomas; Schäfer, Michael
Other Names:
Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
Journal:
Physica status solidi
Issue:
Volume 11:Issue 3/4(2014:Apr.)
Page Start:
940
Record Type:
Journal Article
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6. Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. Issue 12 (December 2015)

Authors:
Brazzini, Tommaso; Casbon, Michael A.; Sun, Huarui; Uren, Michael J.; Lees, Jonathan; Tasker, Paul J.; Jung, Helmut; Blanck, Hervé; Kuball, Martin
Journal:
Microelectronics and reliability
Issue:
Volume 55:Issue 12 Part A(2015)
Page Start:
2493
Record Type:
Journal Article
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7. Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs. (November 2022)

Authors:
Chiocchetta, F.; De Santi, C.; Rampazzo, F.; Mukherjee, K.; Grünenpütt, Jan; Sommer, Daniel; Blanck, Hervé; Lambert, Benoit; Gerosa, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Journal:
Microelectronics and reliability
Issue:
Volume 138(2022)
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Record Type:
Journal Article
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