1. Defect characterization of heavy-ion irradiated AlInN/GaN on Si high-electron-mobility transistors. (20th December 2021) Authors: Challa, S R; Witte, H; Schmidt, G; Bläsing, J; Vega, N; Kristukat, C; Müller, N A; Debray, M E; Christen, J; Dadgar, A; Strittmatter, A Journal: Journal of physics Issue: Volume 55:Number 11(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗