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Author/Creator Binns, Jeff

1. A Comparison of Surface Passivation Techniques for Measurement of Minority Carrier Lifetime in Thin Si Wafers: Toward a Stable and Uniform Passivation. Issue 1670 (17th June 2014)

Authors:
Sopori, Bhushan; Devayajanam, Srinivas; Basnyat, Prakash; Mehta, Vishal; Moutinho, Helio; Nemeth, Bill; LaSalvia, Vincenzo; Johnston, Steve; Ravindra, N.M.; Binns, Jeff; Appel, Jesse
Journal:
MRS proceedings
Issue:
Issue 1670:(2014)
Page Start:
Record Type:
Journal Article
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4. Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps. Issue 23 (21st July 2021)

Authors:
De Guzman, Joyce Ann T.; Markevich, Vladimir P.; Hawkins, Ian D.; Ayedh, Hussein M.; Coutinho, José; Binns, Jeff; Falster, Robert; Abrosimov, Nikolay V.; Crowe, Iain F.; Halsall, Matthew P.; Peaker, Anthony R.
Other Names:
Brehm Moritz guestEditor.; Springholz Gunther guestEditor.
Journal:
Physica status solidi
Issue:
Volume 218:Issue 23(2021)
Page Start:
n/a
Record Type:
Journal Article
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5. Surface Damage Introduced by Diamond Wire Sawing of Si Wafers: Measuring in-depth and the Lateral Distributions for Different Cutting Parameters. Issue 1770 (2015)

Authors:
Sopori, Bhushan; Devayajanam, Srinivas; Basnyat, Prakash; Schnepf, Rekha; Sahoo, Santosh; Gee, James; Severico, Ferdinando; Seigneur, Hubert; Schoenfeld, Winston V.; Preece, Steve; Binns, Jeff; Appel, Jesse; VanSant, Kaitlyn
Editors:
Hekmatshoar, B.; Collins, R.; Holman, Z.; Stradins, P.; Terakawa, A.
Journal:
MRS proceedings
Issue:
Issue 1770(2015)
Page Start:
61
Record Type:
Journal Article
View Content:
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