Surface Damage Introduced by Diamond Wire Sawing of Si Wafers: Measuring in-depth and the Lateral Distributions for Different Cutting Parameters. Issue 1770 (2015)

• Record Type: Journal Article
• Authors: Sopori, Bhushan; Devayajanam, Srinivas; Basnyat, Prakash; Schnepf, Rekha; Sahoo, Santosh; Gee, James; Severico, Ferdinando; Seigneur, Hubert; Schoenfeld, Winston V.; Preece, Steve; Binns, Jeff; Appel, Jesse; VanSant, Kaitlyn
• Editors: Hekmatshoar, B.; Collins, R.; Holman, Z.; Stradins, P.; Terakawa, A.
• Is Part Of: MRS proceedings. Issue 1770(2015)
• Page Start: 61
• Page End: 66
• Publication Date: 2015
• Subjects: dislocations, -- photovoltaic, -- fracture; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.830
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: This paper describes the characteristics of damage, introduced under different conditions of diamond wire sawing, on the Si wafer surfaces. The damage occurs in the form of frozen-in dislocations, phase changes, and microcracks. The in-depth damage was determined by conventional ways such as TEM, SEM and angle-polishing/defect-etching, which only provide local information. We have also applied a new technique based on sequential measurement of the minority carrier lifetime after etching thin layers from the surfaces to determine average damage depth and its in-depth distribution. The lateral spatial damage variations, which seem to be mainly related to wire reciprocation process, were observed by photoluminescence and lifetime mapping. Our results show a strong correlation of damage depth on the diamond grit size and wire usage.