Author/Creator: Bi, J.S. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Bi, J.S.

1. A 28 nm full-margin, high-reliability, and ultra-low-power consumption sense amplifier for STT-MRAM. (September 2019)

Authors:: Zheng, S.W.; Bi, J.S.; Xi, K.; Liu, J.; Liu, M.; Luo, L.
Journal:: Microelectronics and reliability
Issue:: Volume 100/101(2019)
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Record Type:: Journal Article
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2. Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices. (November 2020)

Authors:: Xi, K.; Bi, J.S.; Xu, Y.N.; Li, Y.D.; Zhang, Z.G.; Liu, M.
Journal:: Microelectronics and reliability
Issue:: Volume 114(2020)
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Record Type:: Journal Article
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3. Total ionization dose and single event effects of a commercial stand-alone 4 Mb resistive random access memory (ReRAM). (September 2019)

Authors:: Bi, J.S.; Li, B.; Xi, K.; Luo, L.; Ji, L.L.; Wang, H.B.; Liu, M.
Journal:: Microelectronics and reliability
Issue:: Volume 100/101(2019)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗