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3. Observation of point defect injection from electrical deactivation of arsenic ultra‐shallow distributions formed by ultra‐low energy ion implantation and laser sub‐melt annealing. Issue 1 (9th December 2013)

7. Quality management system and accreditation of measurements in a surface science laboratory: the case study of MiNALab1. (2nd May 2014)

8. Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation – a long term study. Issue 1 (9th December 2013)