Diffusion of implanted nitrogen in germanium. Issue 1 (10th December 2012)

• Record Type: Journal Article
• Authors: Skarlatos, Dimitrios; Barozzi, Mario; Bersani, Massimo; Vouroutzis, Nikos Z.; Ioannou‐Sougleridis, Vassilios
• Is Part Of: Physica status solidi. Volume 10:Issue 1(2013:Jan.)
• Page Start: 60
• Page End: 63
• Publication Date: 2012-12-10
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201200553
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>In the present work diffusion of implanted nitrogen in germanium is studied as a function of implantation energy and post‐implantation annealing temperature. Implantations have been performed at a constant dose and energies leading to the amorphization of the substrate. Nitrogen diffusion in Ge is anomalous (not obeying the 2^nd Fick's law) towards the substrate surface on which an Al₂O₃ layer has been deposited before annealing for protection. There is evidence that N diffusion in Ge is interstitial‐assisted and takes place in the presence of Ge interstitials gradients between the Al₂O₃/Ge and the former amorphous/crystalline (a/c) interface of the substrate during annealing. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>