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2. Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors. Issue 11 (25th July 2014)

3. Electrical Activity of Extended Defects in Relaxed InxGa1−xAs Hetero-Epitaxial Layers. (19th February 2020)

5. Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents. Issue 86 (14th September 2015)

8. Processing Technologies for Advanced Ge Devices. (1st January 2017)

9. Processing Technologies for Advanced Ge Devices. (5th December 2016)