1. (Invited) Epitaxial Lift-Off of GaN and Related Materials for Device Applications. (3rd July 2019) Authors: Fay, Patrick; Wang, Jingshan; Cao, Lina; Xie, J; Beam, Edward; McCarthy, Robert; Reddy, Rekha; Youtsey, Chris Journal: ECS transactions Issue: Volume 92:Number 4(2019) Page Start: 97 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance. Issue 5 (29th January 2013) Authors: Lee, Dong Seup; Laboutin, Oleg; Cao, Yu; Johnson, Wayne; Beam, Edward; Ketterson, Andrew; Schuette, Michael; Saunier, Paul; Kopp, David; Fay, Patrick; Palacios, Tomás; Krishna, Sanjay; Plis, Elena Journal: Physica status solidi Issue: Volume 10:Issue 5(2013:May) Page Start: 827 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates (Phys. Status Solidi A 4∕2019). Issue 4 (19th February 2019) Authors: Wang, Jingshan; McCarthy, Robert; Youtsey, Chris; Reddy, Rekha; Xie, Jinqiao; Beam, Edward; Guido, Louis; Cao, Lina; Fay, Patrick Journal: Physica status solidi Issue: Volume 216:Issue 4(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates. Issue 4 (18th December 2018) Authors: Wang, Jingshan; McCarthy, Robert; Youtsey, Chris; Reddy, Rekha; Xie, Jinqiao; Beam, Edward; Guido, Louis; Cao, Lina; Fay, Patrick Journal: Physica status solidi Issue: Volume 216:Issue 4(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗