1. Chemical depth profiling and 3D reconstruction of III–V heterostructures selectively grown on non‐planar Si substrates by MOCVD. Issue 3 (23rd February 2015) Authors: Gorbenko, V.; Veillerot, M.; Grenier, A.; Audoit, G.; Hourani, W.; Martinez, E.; Cipro, R.; Martin, M.; David, S.; Bao, X.; Bassani, F.; Baron, T.; Barnes, J.‐P. Journal: Physica status solidi Issue: Volume 9:Issue 3(2015:Mar.) Page Start: 202 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Control of heterointerface and strain mapping in Au catalyzed axial Si-Si1-xGex nanowires. Issue 1707 (7th July 2014) Authors: Periwal, P.; Patriarche, G.; Latu-Romain, L.; Salem, B.; Bassani, F.; Baron, T. Journal: MRS proceedings Issue: Issue 1707:(2014) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism. (April 2016) Authors: Brouzet, V.; Salem, B.; Periwal, P.; Alcotte, R.; Chouchane, F.; Bassani, F.; Baron, T.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 118(2016) Page Start: 26 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism. (April 2016) Authors: Brouzet, V.; Salem, B.; Periwal, P.; Alcotte, R.; Chouchane, F.; Bassani, F.; Baron, T.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 118(2016) Page Start: 26 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Interfacial abruptness in axial Si/SiGe heterostructures in nanowires probed by scanning capacitance microscopy. Issue 2 (28th January 2014) Authors: Periwal, P.; Bassani, F.; Patriarche, G.; Latu‐Romain, L.; Brouzet, V.; Salem, B.; Baron, T. Journal: Physica status solidi Issue: Volume 211:Issue 2(2014:Feb.) Page Start: 509 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Nanoscale elemental quantification in heterostructured SiGe nanowires1. Issue 18 (14th May 2015) Authors: Hourani, W.; Periwal, P.; Bassani, F.; Baron, T.; Patriarche, G.; Martinez, E. Journal: Nanoscale Issue: Volume 7:Issue 18(2015) Page Start: 8544 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Nanoscale Surface and Sub-Surface Chemical Analysis of SiGe Nanowires. (August 2014) Authors: Hourani, W.; Martinez, E.; Periwal, P.; Patriarche, G.; Bassani, F.; Fabbri, J.M.; Baron, T. Journal: Microscopy and microanalysis Issue: Volume 20(2014)Supplement 3 Page Start: 2052 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Nanoscale Surface and Sub-Surface Chemical Analysis of SiGe Nanowires. (August 2014) Authors: Hourani, W.; Martinez, E.; Periwal, P.; Patriarche, G.; Bassani, F.; Fabbri, J.M.; Baron, T. Journal: Microscopy and microanalysis Issue: Volume 20:Number 3(2014:Jun.) Page Start: 2052 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗