1. Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers. Issue 5 (2nd May 2016) Authors: Hu, Jie; Stoffels, Steve; Lenci, Silvia; You, Shuzhen; Bakeroot, Benoit; Ronchi, Nicolò; Venegas, Rafael; Groeseneken, Guido; Decoutere, Stefaan Journal: Physica status solidi Issue: Volume 213:Issue 5(2016:May) Page Start: 1229 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗