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3. Narrow Excitonic Lines in Core–Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults. Issue 6 (18th March 2019)

4. Reduction of Residual Impurities in Homoepitaxial m‐Plane (101¯0) GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy (Phys. Status Solidi RRL 8/2018). Issue 8 (8th August 2018)