1. Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer. Issue 10 (20th March 2022) Authors: Segantini, Greta; Barhoumi, Rabei; Manchon, Benoît; Cañero Infante, Ingrid; Rojo Romeo, Pedro; Bugnet, Matthieu; Baboux, Nicolas; Nirantar, Shruti; Deleruyelle, Damien; Sriram, Sharath; Vilquin, Bertrand Other Names: Barabash Sergey V. guestEditor.; Park Min Hyuk guestEditor.; Schenk Tony guestEditor. Journal: Physica status solidi Issue: Volume 16:Issue 10(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer. Issue 10 (7th October 2022) Authors: Segantini, Greta; Barhoumi, Rabei; Manchon, Benoît; Cañero Infante, Ingrid; Rojo Romeo, Pedro; Bugnet, Matthieu; Baboux, Nicolas; Nirantar, Shruti; Deleruyelle, Damien; Sriram, Sharath; Vilquin, Bertrand Other Names: Barabash Sergey V. guestEditor.; Park Min Hyuk guestEditor.; Schenk Tony guestEditor. Journal: Physica status solidi Issue: Volume 16:Issue 10(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Huge gain in pyroelectric energy conversion through epitaxy for integrated self-powered nanodevices. (November 2017) Authors: Moalla, Rahma; Vilquin, Bertrand; Saint-Girons, Guillaume; Le Rhun, Gwenael; Defay, Emmanuel; Sebald, Gael; Baboux, Nicolas; Bachelet, Romain Journal: Nano energy Issue: Volume 41(2017:Nov.) Page Start: 43 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line. (May 2018) Authors: León Pérez, Edgar A.A.; Guenery, Pierre-Vincent; Abouzaid, Oumaïma; Ayadi, Khaled; Brottet, Solène; Moeyaert, Jérémy; Labau, Sébastien; Baron, Thierry; Blanchard, Nicholas; Baboux, Nicolas; Militaru, Liviu; Souifi, Abdelkader Journal: Solid-state electronics Issue: Volume 143(2018) Page Start: 20 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Insertion of an Ultrathin Interfacial Aluminum Layer for the Realization of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction. Issue 10 (24th March 2022) Authors: Manchon, Benoît; Segantini, Greta; Baboux, Nicolas; Rojo Romeo, Pedro; Barhoumi, Rabei; Infante, Ingrid C.; Alibart, Fabien; Drouin, Dominique; Vilquin, Bertrand; Deleruyelle, Damien Other Names: Barabash Sergey V. guestEditor.; Park Min Hyuk guestEditor.; Schenk Tony guestEditor. Journal: Physica status solidi Issue: Volume 16:Issue 10(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid‐State Oscillator. Issue 8 (30th December 2022) Authors: Das, Sujan Kumar; Nandi, Sanjoy Kumar; Marquez, Camilo Verbel; Rúa, Armando; Uenuma, Mutsunori; Puyoo, Etienne; Nath, Shimul Kanti; Albertini, David; Baboux, Nicolas; Lu, Teng; Liu, Yun; Haeger, Tobias; Heiderhoff, Ralf; Riedl, Thomas; Ratcliff, Thomas; Elliman, Robert Glen Journal: Advanced materials Issue: Volume 35:Issue 8(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗