Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer. Issue 10 (7th October 2022)

• Record Type: Journal Article
• Authors: Segantini, Greta; Barhoumi, Rabei; Manchon, Benoît; Cañero Infante, Ingrid; Rojo Romeo, Pedro; Bugnet, Matthieu; Baboux, Nicolas; Nirantar, Shruti; Deleruyelle, Damien; Sriram, Sharath; Vilquin, Bertrand
• Other Names: Barabash Sergey V. guestEditor.; Park Min Hyuk guestEditor.; Schenk Tony guestEditor.
• Is Part Of: Physica status solidi. Volume 16:Issue 10(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-10-07
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.202270019
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Ultra‐Thin Hf0.5 Zr0.5 O2 Capacitors Through interface engineering, Greta Segantini and co‐workers improve ferroelectricity and scalability of hafnium zirconium oxide (HZO)‐based capacitors. In background, a structure with HZO sandwiched between titanium nitride (TiN) electrodes. In foreground, a titanium layer is inserted at the top interface. It promotes an oxygen redistribution that contributes to a significant improvement of HZO ferroelectric properties. More details can be found in article number 2100583 .