1. Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics. (October 2015) Authors: Zubov, F I; Zhukov, A E; Shernyakov, Yu M; Maximov, M V; Semenova, E S; Asryan, L V Journal: Journal of physics Issue: Number 643(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. LASERS : Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure. (28th September 2016) Authors: Sokolova, Z N; Pikhtin, N A; Tarasov, I S; Asryan, L V Journal: Quantum electronics Issue: Volume 46:Number 9(2016) Page Start: 777 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Selection of papers presented at the Symposium 'Semiconductor Lasers: Physics and Technology' : Quantum dot lasers with asymmetric barrier layers: Close-to-ideal threshold and power characteristics. (17th June 2019) Authors: Asryan, L V Journal: Quantum electronics Issue: Volume 49:Number 6(2019) Page Start: 522 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Theory of operating characteristics of a semiconductor quantum well laser: Inclusion of global electroneutrality in the structure. (August 2016) Authors: Sokolova, Z N; Pikhtin, N A; Tarasov, I S; Asryan, L V Journal: Journal of physics Issue: Volume 740(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗