Selection of papers presented at the Symposium 'Semiconductor Lasers: Physics and Technology' : Quantum dot lasers with asymmetric barrier layers: Close-to-ideal threshold and power characteristics. (17th June 2019)

• Record Type: Journal Article
• Authors: Asryan, L V
• Is Part Of: Quantum electronics. Volume 49:Number 6(2019)
• Page Start: 522
• Page End: 528
• Publication Date: 2019-06-17
• Subjects: Quantum electronics -- Periodicals; 537.5
• DOI: 10.1070/QEL17044
• Languages: English
• ISSNs: 1063-7818

Abstract

Abstract: A theory of static (threshold and power) characteristics of novel diode lasers – quantum dot (QD) lasers with asymmetric barrier layers (ABLs) – is developed. The barrier layers are asymmetric in that they have considerably different heights for the carriers of opposite signs. The ABL located on the electron- (hole-) injecting side of the structure provides a low barrier (ideally no barrier) for electrons (holes) [so that it does not prevent electrons (holes) from easily approaching the active region] and a high barrier for holes (electrons) [so that holes (electrons) injected from the opposite side of the structure do not overcome it]. The use of ABLs should thus ideally prevent the simultaneous presence of electrons and holes (and hence parasitic electron – hole recombination) outside the QDs. It is shown in this work that in such a case of total suppression of parasitic recombination, the QD lasers with ABLs offer close-to-ideal performance: the threshold current density is below 10 A cm -2 at any temperature, the absolute value of the characteristic temperature is above 1000 K (which manifests a virtually temperature-independent operation), the internal differential quantum efficiency is practically unity, and the light – current characteristic is linear at any pump current.