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You searched for: Author/Creator Armstrong, Andrew M.

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1. Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature. (1st January 2017)

2. Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature. (9th December 2017)

5. Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐Plane GaN Vertical p–n Diodes. Issue 7 (23rd December 2019)

7. Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress. (October 2021)