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Author/Creator Anandan, Deepak

1. Effect of Flow Rate Scaling on SAE-InAs Crystal Phase and Integration of Self-Catalyzed InAs/InSb Heterostructure Nanowires on Si (111) Substrate by MOCVD. (19th July 2021)

Authors:
Anandan, Deepak; Yu, Hung Wei; Lee, Ching Ting; Dee, Chang Fu; Hamzah, Azrul Azlan; Chang, Edward Yi
Journal:
ECS journal of solid state science and technology
Issue:
Volume 10:Number 7(2021)
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Record Type:
Journal Article
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2. Impact of Fringing Field on Shell Radius and Spacer Dielectric on Device Performance of InAs-GaSb Core-Shell Nanowire nTFET. (7th June 2021)

Authors:
Joseph, H. Bijo; Singh, Sankalp Kumar; Nagarajan, Venkatesan; Anandan, Deepak; Chang, Edward Yi; Kakkerla, Ramesh Kumar; D, John Thiruvadigal
Journal:
ECS journal of solid state science and technology
Issue:
Volume 10:Number 6(2021)
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Record Type:
Journal Article
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3. Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate. (1st July 2022)

Authors:
Hieu, Le Trung; Chiang, Chung-Han; Anandan, Deepak; Dee, Chang-Fu; Hamzah, Azrul Azlan; Lee, Ching-Ting; Lin, Chung-Hsiung; Chang, Edward Yi
Journal:
Semiconductor science and technology
Issue:
Volume 37:Number 7(2022)
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Record Type:
Journal Article
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5. Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD. (15th November 2021)

Authors:
Anandan, Deepak; Yu, Hung Wei; Chang, Edward Yi; Singh, Sankalp Kumar; Nagarajan, Venkatesan; Lee, Ching Ting; Dee, Chang Fu; Ueda, Daisuke
Journal:
Materials science in semiconductor processing
Issue:
Volume 135(2021)
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Record Type:
Journal Article
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