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1. (20$ \bar 2 $1) MOVPE and HVPE GaN grown on 2″ patterned sapphire substrates. Issue 3 (22nd January 2014)

2. 2″‐4″ diameter GaN‐on‐sapphire substrates free of wafer bow at all temperatures. Issue 3 (5th March 2014)

3. A dual‐character InGaN/GaN multiple quantum well device for electroluminescence and photovoltaic absorption of near‐mutually exclusive wavelengths. Issue 3 (24th January 2014)

4. A III‐nitride polarization enhanced electron filter for controlling the spectral response of solar‐blind AlGaN/AlN/SiC photodiodes. Issue 3 (27th February 2014)

5. Advantages of the moth‐eye patterned sapphire substrate for the high performance nitride based LEDs. Issue 3 (19th March 2014)

6. AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz. Issue 3 (20th March 2014)

7. All‐epitaxial fabrication of a nanowire plasmon laser structure. Issue 3 (19th March 2014)

8. AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si‐CMOS fabs. Issue 3 (17th February 2014)

9. AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film. Issue 3 (5th March 2014)

10. An investigation into defect reduction techniques for growth of non‐polar GaN on sapphire. Issue 3 (17th February 2014)