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Author/Creator Altuntas, P.

1. GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers. Issue 3 (19th March 2014)

Authors:
Cordier, Y.; Frayssinet, E.; Chmielowska, M.; Nemoz, M.; Courville, A.; Vennéguès, P.; Mierry, P. De; Chenot, S.; Camus, J.; Aissa, K. Ait; Simon, Q.; Brizoual, L. Le; Djouadi, M. A.; Defrance, N.; Lesecq, M.; Altuntas, P.; Cutivet, A.; Agboton, A.; Jaeger, J.‐C. De
Other Names:
Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
Journal:
Physica status solidi
Issue:
Volume 11:Issue 3/4(2014:Apr.)
Page Start:
498
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

2. Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. (September 2018)

Authors:
Oualli, M.; Dua, C.; Patard, O.; Altuntas, P.; Piotrowicz, S.; Gamarra, P.; Lacam, C.; Jacquet, J.-C.; Teisseire, L.; Lancereau, D.; Chartier, E.; Potier, C.; Delage, S.L.
Journal:
Microelectronics and reliability
Issue:
Volume 88/90(2018)
Page Start:
418
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

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