1. Analog parameters of solid source Zn diffusion InXGa1−XAs nTFETs down to 10 K. (28th October 2016) Authors: Bordallo, C; Martino, J A; Agopian, P G D; Alian, A; Mols, Y; Rooyackers, R; Vandooren, A; Verhulst, A S; Smets, Q; Simoen, E; Claeys, C; Collaert, N Journal: Semiconductor science and technology Issue: Volume 31:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Deep levels in metal–oxide–semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates. (21st June 2019) Authors: Simoen, E; Hsu, P-C; Alian, A; El Kazzi, S; Wang, C Journal: Semiconductor science and technology Issue: Volume 34:Number 7(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction. (May 2019) Authors: Hsu, P C (Brent); Simoen, E; Eneman, G; Merckling, C; Alian, A; Langer, R; Collaert, N; Heyns, M Journal: Journal of physics Issue: Volume 1190(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗