1. Sub‐1100 nm lasing from post‐growth intermixed InAs/GaAs quantum‐dot lasers. Issue 18 (1st September 2015) Authors: Alhashim, H.H.; Khan, M.Z.M.; Majid, M.A.; Ng, T.K.; Ooi, B.S. Journal: Electronics letters Issue: Volume 51:Issue 18(2015) Page Start: 1444 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗