Sub‐1100 nm lasing from post‐growth intermixed InAs/GaAs quantum‐dot lasers. Issue 18 (1st September 2015)

• Record Type: Journal Article
• Authors: Alhashim, H.H.; Khan, M.Z.M.; Majid, M.A.; Ng, T.K.; Ooi, B.S.
• Is Part Of: Electronics letters. Volume 51:Issue 18(2015)
• Page Start: 1444
• Page End: 1445
• Publication Date: 2015-09-01
• Subjects: indium compounds -- gallium arsenide -- III‐V semiconductors -- quantum dot lasers -- vacancies (crystal) -- laser tuning; post growth intermixed quantum‐dot lasers -- impurity free vacancy disordering -- high internal quantum effi‐ ciency -- device characteristics -- wavelength tuned lasers -- high power -- high gain -- wavelength 1070 nm to 1190 nm -- InAs‐GaAs; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.1803
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum‐dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non‐coated facet Fabry‐Pērot post‐growth wavelength tuned lasers exhibits high‐power (>1.4W) and high‐gain (∼50 cm −1 ), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.