1. Semiconductor devices and technologies for future ultra low power electronics. (2021) Editors: Nirmal, D; Ajayan, J; Fay, Patrick J Record Type: Book Extent: 1 online resource, illustrations (black and white) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs. Issue 8 (3rd August 2021) Authors: Murugapandiyan, P; Hasan, Md. Tanvir; Rajya Lakshmi, V; Wasim, Mohd; Ajayan, J; Ramkumar, N; Nirmal, D Journal: International journal of electronics Issue: Volume 108:Issue 8(2021) Page Start: 1273 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Handbook for III-V high electron mobility transistor technologies. (2019) Editors: Nirmal, D; Ajayan, J Record Type: Book Extent: 1 online resource, illustrations (black and white) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Organic and inorganic light emitting diodes : reliability issues and performance enhancement /: reliability issues and performance enhancement. (2023) Editors: Subash, T. D; Ajayan, J; Grabinski, Wladek Record Type: Book Extent: 1 online resource (248 pages), illustrations (black and white) View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2 field-effect transistors. (4th June 2023) Authors: Thoutam, Laxman Raju; Mathew, Ribu; Ajayan, J; Tayal, Shubham; Nair, Shantikumar V Journal: Nanotechnology Issue: Volume 34:Number 23(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2 field-effect transistors. (4th June 2023) Authors: Thoutam, Laxman Raju; Mathew, Ribu; Ajayan, J; Tayal, Shubham; Nair, Shantikumar V Journal: Nanotechnology Issue: Volume 34:Number 23(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2 field-effect transistors. (4th June 2023) Authors: Thoutam, Laxman Raju; Mathew, Ribu; Ajayan, J; Tayal, Shubham; Nair, Shantikumar V Journal: Nanotechnology Issue: Volume 34:Number 23(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2 field-effect transistors. (4th June 2023) Authors: Thoutam, Laxman Raju; Mathew, Ribu; Ajayan, J; Tayal, Shubham; Nair, Shantikumar V Journal: Nanotechnology Issue: Volume 34:Number 23(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2 field-effect transistors. (4th June 2023) Authors: Thoutam, Laxman Raju; Mathew, Ribu; Ajayan, J; Tayal, Shubham; Nair, Shantikumar V Journal: Nanotechnology Issue: Volume 34:Number 23(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2 field-effect transistors. (4th June 2023) Authors: Thoutam, Laxman Raju; Mathew, Ribu; Ajayan, J; Tayal, Shubham; Nair, Shantikumar V Journal: Nanotechnology Issue: Volume 34:Number 23(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗