1. Growth‐Rate‐Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy (Phys. Status Solidi A 10∕2019). Issue 1 (9th January 2019) Authors: , Zon; Phienlumlert, Pakawat; Thainoi, Supachok; Kiravittaya, Suwit; Tandaechanurat, Aniwat; Nuntawong, Noppadon; Sopitpan, Suwat; Yordsri, Visittapong; Thanachayanont, Chanchana; Kanjanachuchai, Songphol; Ratanathammaphan, Somchai; Panyakeow, Somsak; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Ya... Other Names: Chowdhury Srabanti guestEditor.; Palacios Tomas guestEditor.; Xing Grace (Huili) guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 1(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Growth‐Rate‐Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy. Issue 1 (8th October 2018) Authors: , Zon; Phienlumlert, Pakawat; Thainoi, Supachok; Kiravittaya, Suwit; Tandaechanurat, Aniwat; Nuntawong, Noppadon; Sopitpan, Suwat; Yordsri, Visittapong; Thanachayanont, Chanchana; Kanjanachuchai, Songphol; Ratanathammaphan, Somchai; Panyakeow, Somsak; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Ya... Other Names: Chowdhury Srabanti guestEditor.; Palacios Tomas guestEditor.; Xing Grace (Huili) guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 1(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗