Investigation the effect of dopant Te on CdSe thin films deposited by RF magnetron sputtering method. (1st May 2023)

• Record Type: Journal Article
• Authors: Kumar, Devendra; Lal, Chiranji; Veer, Dharm; Singh, Deshraj; Kumar, Pawan; Katiyar, Ram S
• Is Part Of: Physica scripta. Volume 98:Number 5(2023)
• Publication Date: 2023-05-01
• Subjects: dopant -- Te -- CdSe -- thin film -- sputtering -- nanocomposites -- optoelectronics; Physics -- Periodicals; 530.05
• DOI: 10.1088/1402-4896/accabc
• Languages: English
• ISSNs: 0031-8949

Abstract

Abstract: CdSe and CdSe:Te thin films were grown on glass substrates by RF magnetron sputtering. The doping percentage of Tellurium (Te) in CdSe was 7% for the CdSe:Te thin film. The microscopic images of the films were found to be uniform and homogeneous in nature with a uniform grain and no cracks, and the grain size of CdSe was higher than CdSe:Te thin film. CdSe:Te thin film shows a higher absorption coefficient compared to CdSe in the visible region. The Energy band gaps were found to be 2.01 and 1.73 eV for CdSe and CdSe:Te thin films, respectively. The incorporation of Te atom into the CdSe structure has enhanced the mobility and changed the type of conductivity from n-type to p-type.